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To solve this problem, we are tasked with calculating two quantities: 

1. **Electron mobility** \( \mu_e \)
2. **Conductivity** \( \sigma \)

### Given dataTo solve this problem, we are tasked with calculating two quantities: 

1. **Electron mobility** \( \mu_e \)
2. **Conductivity** \( \sigma \)

### Given 

- Electron concentration \( n = 6.2 \times 10^8 \, \text{m}^{-3} \)
- Electric field \( E = 800 \, \text{V/m} \)
- Drift velocity \( v_d = 145 \, \frac{\text{m}}{\text{s}} \)
- Elementary charge \( e = 1.6 \times 10^{-19} \, \text{C} \)

---

### Step 1: Calculate Electron Mobility \( \mu_e \)

The formula for electron mobility is:

\[
\mu_e = \frac{v_d}{E}
\]

Substituting the known values:

\[
\mu_e = \frac{145 \, \text{m/s}}{800 \, \text{V/m}} = 0.18125 \, \frac{\text{m}^2}{\text{V} \cdot \text{s}}
\]

Thus, the electron mobility \( \mu_e = 0.18125 \, \frac{\text{m}^2}{\text{V} \cdot \text{s}} \).

---

### Step 2: Calculate Conductivity \( \sigma \)

The formula for conductivity is:

\[
\sigma = n e \mu_e
\]

Substituting the known values:

\[
\sigma = (6.2 \times 10^8 \, \text{m}^{-3})(1.6 \times 10^{-19} \, \text{C})(0.18125 \, \frac{\text{m}^2}{\text{V} \cdot \text{s}})
\]

\[
\sigma = 1.798 \times 10^{-10} \, \text{S/m}
\]

Thus, the conductivity \( \sigma = 1.798 \times 10^{-10} \, \text{S/m} \).

---

### Final Answers:

- \( \mu_e = 0.18125 \, \frac{\text{m}^2}{\text{V} \cdot \text{s}} \)
- \( \sigma = 1.798 \times 10^{-10} \, \text{S/m} \)

---

Let me know if you need further clarifications or details!

### Further questions:
1. What factors affect the electron mobility in a semiconductor?
2. How does temperature affect the conductivity of an n-type semiconductor?
3. Can the same formulas be used for p-type semiconductors?
4. How does the drift velocity of electrons change with increasing electric field?
5. What is the significance of the elementary charge in these calculations?

### Tip:
The mobility of charge carriers in a semiconductor typically decreases as temperature increases due to increased scattering.

n-tyypin puolijohteella on elektronikonsentraatio n = 6.2 * 10^8 m^-3. Puolijohde on E = 800 V/m, jolloin elektronien virtausnopeus v_d = 145 m/s. Laske elektronien liikkuvuus μ_e ja puolijohteen johtavuus σ.

Learn how to calculate the electron mobility (μ_e = 0.18125 m^2/V·s) and conductivity (σ = 1.798 x 10^-10 S/m) for an n-type semiconductor given electron concentration, electric field, and drift velocity.

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