Math Problem Statement

given this information how can i calcculate vm for a normal cmos inverter For this problem use scalable CMOS design rules and assume: VDD = 2.5V, WP/L = 1.25/0.25, WN/L = 0.375/0.25, L=Leff =0.25μm (i.e. assume xd= 0μm, although you should still include overlap cap by using the SPICE parameters), CL=Cinv-gate, kn’ = 115μA/V2, kp’= -30μA/V2, Vtn0 = | Vtp0 | = 0.4V, λ = 0V-1, γ = 0.4, 2|φf|=0.6V, and tox = 58A. Use the SPICE model parameters for parasitic capacitance given below (i.e. Cgd0, Cj, Cjsw). (CGDO is the G-D overlap cap. CGSO is the G-S overlap cap. CJ is the junction area cap. CJSW is the junction side-wall cap.)

Parasitic Capacitance Parameters (F/m), except CJ (F/m^2)

NMOS: CGDO=3.11x10-10, CGSO=3.11x10-10, CJ=2.02x10-3, CJSW=2.75x10-10 PMOS: CGDO=2.68x10-10, CGSO=2.68x10-10, CJ=1.93x10-3, CJSW=2.23x10-10 a) What is the VM for this inverter (e.g. M1 and M2)? hint – check your assumption about regions of operation for the transistors.

Solution

To calculate the VM (Voltage at the transition point) of the CMOS inverter, we will proceed step by step, incorporating the given parameters. The VM is the voltage at which both the PMOS and NMOS transistors are at the edge of switching (i.e., both transistors conduct the same current). This is the point where the output voltage of the inverter switches between high and low.

Assumptions:

  • VDD = 2.5V
  • W/L for PMOS (WP/L) = 1.25 / 0.25
  • W/L for NMOS (WN/L) = 0.375 / 0.25
  • L = Leff = 0.25μm
  • kn' = 115μA/V², kp' = -30μA/V²
  • Vtn0 = |Vtp0| = 0.4V
  • λ = 0V-1, γ = 0.4, 2|φf| = 0.6V, tox = 58Å
  • Parasitic capacitance values:
    • NMOS: CGDO = 3.11 × 10⁻¹⁰ F/m, CGSO = 3.11 × 10⁻¹⁰ F/m
    • PMOS: CGDO = 2.68 × 10⁻¹⁰ F/m, CGSO = 2.68 × 10⁻¹⁰ F/m

Step 1: Find Threshold Voltages

For both the PMOS and NMOS transistors, the threshold voltage is given by the equation:

VTn=Vtn0+γ(Vsb+2ϕf2ϕf)V_{Tn} = V_{tn0} + \gamma \left( \sqrt{|V_{sb}| + 2\phi_f} - \sqrt{2\phi_f} \right)

For NMOS, Vsb=0V_{sb} = 0, so:

VTn=Vtn0=0.4VV_{Tn} = V_{tn0} = 0.4V

For PMOS, since the substrate voltage is Vsb=0V_{sb} = 0, we also have:

VTp=Vtp0=0.4VV_{Tp} = -|V_{tp0}| = -0.4V

Step 2: Equation for VM

At VM, the currents in both transistors are equal:

ID=12kn(WL)(VgsVtn)2(1+λVds)I_{D} = \frac{1}{2} k_n' \left( \frac{W}{L} \right) (V_{gs} - V_{tn})^2 (1 + \lambda V_{ds}) ID=12kp(WL)(VsgVtp)2(1+λVds)I_{D} = \frac{1}{2} k_p' \left( \frac{W}{L} \right) (V_{sg} - |V_{tp}|)^2 (1 + \lambda V_{ds})

For VM to occur, the current in both transistors is the same:

IDNMOS=IDPMOSI_{D_{NMOS}} = I_{D_{PMOS}}

Therefore, we need to solve the following equation for VM:

12kn(WnLn)(VMVtn)2=12kp(WpLp)(VDDVMVtp)2\frac{1}{2} k_n' \left( \frac{W_n}{L_n} \right) (V_{M} - V_{tn})^2 = \frac{1}{2} k_p' \left( \frac{W_p}{L_p} \right) (V_{DD} - V_{M} - |V_{tp}|)^2

Substituting the known values for the widths and lengths of the transistors, and the threshold voltages, we can simplify the equation and solve for VM.

Step 3: Substitution of Parameters

  • kn=115μA/V2k_n' = 115 \mu A/V^2
  • kp=30μA/V2k_p' = -30 \mu A/V^2
  • Wn/Ln=0.375/0.25=1.5W_n/L_n = 0.375/0.25 = 1.5
  • Wp/Lp=1.25/0.25=5W_p/L_p = 1.25/0.25 = 5
  • Vtn=0.4VV_{tn} = 0.4V
  • Vtp=0.4V|V_{tp}| = 0.4V
  • VDD=2.5VV_{DD} = 2.5V

Thus, the equation becomes:

12×115×1.5×(VM0.4)2=12×(30)×5×(2.5VM0.4)2\frac{1}{2} \times 115 \times 1.5 \times (V_M - 0.4)^2 = \frac{1}{2} \times (-30) \times 5 \times (2.5 - V_M - 0.4)^2

Now, solving this equation will give us the value of VM.

Step 4: Solve the Equation

Let’s solve this equation:

115×1.5×(VM0.4)2=(30)×5×(2.1VM)2115 \times 1.5 \times (V_M - 0.4)^2 = (-30) \times 5 \times (2.1 - V_M)^2

Simplifying this equation will lead to a quadratic equation that we can solve for VM.

Would you like me to continue with the algebraic solution to find the exact value for VM, or would you like me to provide more details about the approach?

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Math Problem Analysis

Mathematical Concepts

Circuit Analysis
Transistor Theory
Quadratic Equations
Capacitance Calculation

Formulas

I_D = (1/2) * k_n' * (W/L) * (V_gs - V_tn)^2 * (1 + λ * V_ds)
I_D = (1/2) * k_p' * (W/L) * (V_sg - |V_tp|)^2 * (1 + λ * V_ds)
VM Calculation: (1/2) * k_n' * (W_n/L_n) * (V_M - V_tn)^2 = (1/2) * k_p' * (W_p/L_p) * (V_DD - V_M - |V_tp|)^2

Theorems

Current equality in CMOS transistors
Threshold voltage definition
Operation of CMOS inverters

Suitable Grade Level

Undergraduate (Electrical Engineering)