Math Problem Statement

For the circuit in Fig 2, determine the following parameters. Assume that the transistor is made of Germanium. Assume beta = 100. i. Determine the base current, I_B. ii. Calculate the voltage drop, V_CE, across collector-emitter junction. iii. Determine the total emitter current, I_E.

Solution

Let's work through the problem systematically. The transistor is made of Germanium, and the current gain β=100\beta = 100. We'll go step by step to find the required parameters:

i. Determine the base current IBI_B.

We can apply Kirchhoff’s Voltage Law (KVL) in the base loop to find IBI_B. The base-emitter voltage for a Germanium transistor is typically around 0.3V.

Base loop:

VBB=IBRB+VBEV_{BB} = I_B R_B + V_{BE}

Where:

  • VBB=5VV_{BB} = 5V
  • RB=10kΩR_B = 10k\Omega
  • VBE=0.3VV_{BE} = 0.3V (for Germanium)

Substitute the values into the equation:

5=IB10k+0.35 = I_B \cdot 10k + 0.3

Solve for IBI_B:

IB=50.310k=4.710k=0.47 mAI_B = \frac{5 - 0.3}{10k} = \frac{4.7}{10k} = 0.47 \text{ mA}

Thus, the base current IB=0.47 mAI_B = 0.47 \text{ mA}.


ii. Calculate the voltage drop VCEV_{CE} across the collector-emitter junction.

For VCEV_{CE}, we'll use Kirchhoff’s Voltage Law (KVL) in the collector-emitter loop.

VCC=ICRC+VCEV_{CC} = I_C \cdot R_C + V_{CE}

Now, we know:

  • VCC=10VV_{CC} = 10V
  • RC=100ΩR_C = 100\Omega
  • IC=βIBI_C = \beta \cdot I_B

Since β=100\beta = 100 and IB=0.47 mAI_B = 0.47 \text{ mA}:

IC=100×0.47 mA=47 mAI_C = 100 \times 0.47 \text{ mA} = 47 \text{ mA}

Now substitute the values into the KVL equation:

10V=47 mA×100Ω+VCE10V = 47 \text{ mA} \times 100\Omega + V_{CE}

10V=4.7V+VCE10V = 4.7V + V_{CE}

So,

VCE=10V4.7V=5.3VV_{CE} = 10V - 4.7V = 5.3V

Thus, the voltage drop VCE=5.3VV_{CE} = 5.3V.


iii. Determine the total emitter current IEI_E.

The total emitter current IEI_E is related to the base and collector currents by:

IE=IB+ICI_E = I_B + I_C

Substitute the values of IBI_B and ICI_C:

IE=0.47 mA+47 mA=47.47 mAI_E = 0.47 \text{ mA} + 47 \text{ mA} = 47.47 \text{ mA}

Thus, the emitter current IE=47.47 mAI_E = 47.47 \text{ mA}.


Summary of Results:

  • IB=0.47 mAI_B = 0.47 \text{ mA}
  • VCE=5.3 VV_{CE} = 5.3 \text{ V}
  • IE=47.47 mAI_E = 47.47 \text{ mA}

Would you like more details or have any questions?


Here are 5 related questions to extend this topic:

  1. How would the results change if the transistor were made of Silicon instead of Germanium?
  2. What is the effect of changing RCR_C to 200 ohms on the current ICI_C?
  3. How can you calculate the power dissipated by the transistor in this circuit?
  4. What happens to IBI_B if VBBV_{BB} is increased to 6V?
  5. How would varying β\beta affect the overall behavior of the circuit?

Tip: Always check the type of transistor (Germanium or Silicon) when calculating the base-emitter voltage VBEV_{BE}, as it significantly affects the current calculations.

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Math Problem Analysis

Mathematical Concepts

Electronics
Kirchhoff’s Voltage Law
Transistor Characteristics
Ohm's Law

Formulas

V_BB = I_B R_B + V_BE
V_CC = I_C R_C + V_CE
I_E = I_B + I_C

Theorems

Kirchhoff’s Voltage Law
Ohm's Law

Suitable Grade Level

Grades 11-12, Undergraduate