Math Problem Statement

The parameters of an n-channel MOSFET are k'n (μCox)=0.6 mA/V^2 and VT=0.8 V. The drain current is 1 mA with applied voltages of VGS=1.4 V and VDS=4 V. What is the W/L value?

Solution

To find the W/L ratio of the n-channel MOSFET, we use the standard equation for the drain current in the saturation region of a MOSFET:

ID=kn2WL(VGSVT)2I_D = \frac{k'_n}{2} \cdot \frac{W}{L} \cdot (V_{GS} - V_T)^2

Where:

  • IDI_D is the drain current,
  • knk'_n (or μCox\mu C_{ox}) is the process transconductance parameter,
  • VGSV_{GS} is the gate-to-source voltage,
  • VTV_T is the threshold voltage,
  • W/LW/L is the width-to-length ratio of the MOSFET.

Given values:

  • ID=1mAI_D = 1 \, \text{mA},
  • kn=0.6mA/V2k'_n = 0.6 \, \text{mA/V}^2,
  • VGS=1.4VV_{GS} = 1.4 \, \text{V},
  • VT=0.8VV_T = 0.8 \, \text{V}.

Step 1: Plug in the values into the equation

1mA=0.6mA/V22WL(1.4V0.8V)21 \, \text{mA} = \frac{0.6 \, \text{mA/V}^2}{2} \cdot \frac{W}{L} \cdot (1.4 \, \text{V} - 0.8 \, \text{V})^2 1mA=0.62WL(0.6)21 \, \text{mA} = \frac{0.6}{2} \cdot \frac{W}{L} \cdot (0.6)^2

Step 2: Simplify

1mA=0.3WL0.361 \, \text{mA} = 0.3 \cdot \frac{W}{L} \cdot 0.36 1mA=0.108WL1 \, \text{mA} = 0.108 \cdot \frac{W}{L}

Step 3: Solve for WL\frac{W}{L}

WL=1mA0.1089.26\frac{W}{L} = \frac{1 \, \text{mA}}{0.108} \approx 9.26

Thus, the W/L ratio of the MOSFET is approximately 9.26.

Do you want further details or have any questions?

Here are 5 related questions to expand this topic:

  1. What happens to the MOSFET current if the W/L ratio is increased?
  2. How does VGSV_{GS} affect the operating region of the MOSFET?
  3. What are the differences between linear and saturation regions in MOSFET operation?
  4. How does changing knk'_n (process parameter) impact the MOSFET's performance?
  5. How can one adjust the threshold voltage VTV_T in MOSFET design?

Tip: In MOSFET design, increasing the W/L ratio improves the drive strength, allowing for higher current at the same gate voltage.

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Math Problem Analysis

Mathematical Concepts

MOSFET Physics
Semiconductor Theory
Transistor Operation

Formulas

ID = (k'n / 2) * (W/L) * (VGS - VT)^2

Theorems

MOSFET Drain Current Equation in Saturation Region

Suitable Grade Level

Undergraduate - Electrical Engineering